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Electron Beam Writing
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The main advantages of direct e-beam writing are:
High Resolution
Electron beam lithography can define pattern geometries unequalled by any other method. Lateral dimensions smaller than 10 nm can be obtained.
Pattern Fidelity
Due to its intrinsically high resolution, excellent pattern definition can be achieved with appropriate exposure schemes.
Overlay to Existing Technology Levels
E-beam patterns can be overlayed to existing layers with very high accuracy. Registration signals from reference markers are used for this purpose.
Fast Prototyping without Need for Mask Production
Electron beam direct write is a computer-controlled sequential process. No pattern masters are required, making it the ideal tool for flexible generation of low-volume prototypes.
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