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High Frequency Electronics
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High-frequency electronics has been the major driver and first production-relevant application for direct write e-beam lithography. Gatelengths in the 100 nm range can be produced with good process latitude and yield. Relying on e-beam technology, GaAs and InP FETs deliver power gain cutoff frequencies well above 100 GHz and are the crucial building blocks of advanced microwave monolithic integrated circuits (MMICs).
 
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During the last ten years, we have exposed thousands of
III/V-wafers (2-4 inch) with more than 100 different designs for
MMICs and discretes.
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We have fabricated T- and G-Gates on GaAs and InP with
gatelengths in the sub-100 nm regime.
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