High Frequency Electronics

High-frequency electronics has been the major driver and first production-relevant application
for direct write e-beam lithography. Gatelengths in the 100 nm range can be produced with good
process latitude and yield. Relying on e-beam technology, GaAs and InP FETs deliver power gain
cutoff frequencies well above 100 GHz and are the crucial building blocks of advanced microwave
monolithic integrated circuits (MMICs).

 

 

 

During the last fifteen years, we have exposed thousands of III/V-wafers
(2-4 inch) with more than 100 different designs for MMICs and discretes.
  We have fabricated T- and G-Gates on GaAs and InP with gatelengths in the sub-100 nm regime.