High Frequency Electronics
High-frequency electronics has been the major driver and first production-relevant application
for direct write e-beam lithography. Gatelengths in the 100 nm range can be produced with good
process latitude and yield. Relying on e-beam technology, GaAs and InP FETs deliver power gain
cutoff frequencies well above 100 GHz and are the crucial building blocks of advanced microwave
monolithic integrated circuits (MMICs).
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| During the last ten years, we have exposed thousands of III/V-wafers (2-4 inch) with more than 100 different designs for MMICs and discretes. |
We have fabricated T- and G-Gates on GaAs and InP with gatelengths in the sub-100 nm regime. | |
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